elektronische bauelemente ssm9573 -2.7a , -60v , r ds(on) 175m ? p-channel enhancement mode power mosfet 11-aug-2014 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the ssm9573 provide the designer with the b est combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-223 p ackage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v t a =25c -2.7 a continuous drain current 1 @v gs =10v t a =70c i d -2 a pulsed drain current 2 i dm -5 a power dissipation 3 t a =25c p d 1.5 w operating junction & storage temperature t j , t stg -55~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 85 c / w thermal resistance junction-case 1 (max). r jc 60 c / w 9573 = date code sot-223 millimeter millimeter ref. min. max. ref. min. max. a 5.90 6.70 g - 0.18 b 6.70 7.30 h 2.00 ref. c 3.30 3.80 j 0.20 0.40 d 1.42 1.90 k 1.10 ref. e 4.45 4.75 l 2.30 ref. f 0.60 0.85 m 2.80 3.20 top view 1 2 3 4 a m b d l k f g h j e c 1 gate 3 source 2 drain
elektronische bauelemente ssm9573 -2.7a , -60v , r ds(on) 175m ? p-channel enhancement mode power mosfet 11-aug-2014 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -60 - - v v gs =0, i d = -250 a gate-threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250 a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - -1 v ds = -48v, v gs =0 drain-source leakage current t j =55c i dss - - -5 a v ds = -48v, v gs =0 - - 175 v gs = -10v, i d = -2.5a static drain-source on-resistance 2 r ds(on) - - 230 m v gs = -4.5v, i d = -1.5a total gate charge q g - 4.59 - gate-source charge q gs - 1.39 - gate-drain (miller) change q gd - 1.62 - nc i d = -2a v ds = -20v v gs = -4.5v turn-on delay time 2 t d(on) - 17.4 - rise time t r - 5.4 - turn-off delay time t d(off) - 37.2 - fall time t f - 2.4 - ns v ds = -15v v gs = -10v r g = 3.3 i d = -1a input capacitance c iss - 531 - output capacitance c oss - 59 - reverse transfer capacitance c rss - 38 - pf v gs =0 v ds =15v f =1.0mhz source-drain diode diode forward voltage 2 v sd - - -1.2 v i s = -1a, v gs =0 continuous source current 1.4 i s - - -2.7 a pulsed source current 2.4 i sm - - -5 a v ds =v gs =0, force current note: 1. surface mounted on a 1 inch2 fr4 board with 2oz copper, t Q 10sec. , 125c /w when mounted on min. copper pad. 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the power dissipation is limited by 150c junction temperature 4. the data is theoretically the same as id and idm , in real applications , should be limited by tota l power dissipation.
elektronische bauelemente ssm9573 -2.7a , -60v , r ds(on) 175m ? p-channel enhancement mode power mosfet 11-aug-2014 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente ssm9573 -2.7a , -60v , r ds(on) 175m ? p-channel enhancement mode power mosfet 11-aug-2014 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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